简要说明：Force牌的CPU-3CE/16产品：估价：888，规格：CPU-3CE/16 ，产品系列编号：齐全

　　R88M-WP40030T-BW密西根理工大学日前与美国橡树岭国家实验室(ORNL)共同发表具有金量子点(QD)的BNNT，使其一种像穿隧电晶体一样电子可在量子点之间跳跃的元件；这篇名为“带金量子点功能的BNNT室温穿隧行为”(Room-Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots)的报告已经发表在《先进材料》(Advanced Materials)期刊中。
　　研究人员在发现石墨烯具有相容于氮化硼的晶格结构后，除去了在其介面上的电子散射，他们认为可共同利用于创造出像电晶体般行为的异质接面。
　　R88M-WP40030T-BW结合石墨烯(灰色)的化学结构与BNNT(粉红和紫色)，成为打造无半导体数位交换器的关键。
“我们最先发布于2013年《先进材料》中的首项成果是基于金量子点之间的量子穿隧行为。量子点之间的实体间隙主要用于制作阻止电子流的潜在障碍(“关断”状态)，”Yap 说。“目前针对石墨烯-BNNT异质接面的研究，由于半金属石墨烯与宽能隙BNNT之间的状态密度(DOS)不匹配，形成防止电流流经接面(“关断”状态)的穿隧阻障层。在充份施加电场后，弯曲能带使量子穿隧跨越阻障层，从而开启了开关。”
　　R88M-WP40030T-BW为了实现石墨烯/氮化硼异质接面，研究团队在剥落的石墨烯单层蚀刻针孔，并从中生长BNNT——由于晶格匹配——使其分别形成电晶体般的异质接面。在以扫瞄电子显微镜(SEM)即时监测期间，室温下以四探针扫瞄穿隧显微镜(STM)进行特性化后，研究人员们发现仅开启0.5V电压时的交换率高达105。Yap认为，新的特性是在利用密度泛函理论(DFT)模拟后由于DOS不匹配所致。
　　灰色石墨导电基底可生长绝缘的BNNT，从而形成无半导体电晶体的异质接面。

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